bcx51...bcx53 feb-10-2004 1 pnp silicon af transistors ? for af driver and output stages ? high collector current ? low collector-emitter saturation voltage ? complementary types: bcx54...bcx56 (npn) 2 1 3 vps05162 2 type marking pin configuration package bcx51 BCX51-10 bcx51-16 bcx52 bcx52-10 bcx52-16 bcx53 bcx53-10 bcx53-16 aa ac ad ae ag am ah ak al 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 2 = c 2 = c 2 = c 2 = c 2 = c 2 = c 2 = c 2 = c 2 = c 3 = e 3 = e 3 = e 3 = e 3 = e 3 = e 3 = e 3 = e 3 = e sot89 sot89 sot89 sot89 sot89 sot89 sot89 sot89 sot89
bcx51...bcx53 feb-10-2004 2 maximum ratings parameter symbol bcx51 bcx52 bcx53 unit collector-emitter voltage v ceo 45 60 80 v collector-base voltage v cbo 45 60 100 emitter-base voltage v ebo 5 5 5 dc collector current i c 1 a 1.5 peak collector current i cm base current i b ma 100 i bm 200 peak base current w p tot total power dissipation , t s = 130 c 1 junction temperature 150 c t j t st g -65 ... 150 storage temperature thermal resistance junction - soldering point 1) r thjs 20 k/w 1 for calculation of r thja please refer to application note thermal resistance
bcx51...bcx53 feb-10-2004 3 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 10 ma, i b = 0 bcx51 bcx52 bcx53 v (br)ceo 45 60 80 - - - - - - v collector-base breakdown voltage i c = 100 a, i e = 0 bcx51 bcx52 bcx53 v (br)cbo 45 60 100 - - - - - - emitter-base breakdown voltage i e = 10 a, i c = 0 v (br)ebo 5 - - collector cutoff current v cb = 30 v, i e = 0 i cbo - - 100 na collector cutoff current v cb = 30 v, i e = 0 , t a = 150 c i cbo - - 20 a dc current gain 1) i c = 5 ma, v ce = 2 v h fe 25 - - - dc current gain 1) i c = 150 ma, v ce = 2 v bcx51...53 hfe-grp.10 hfe-grp.16 h fe 40 63 100 - 100 160 250 160 250 dc current gain 1) i c = 500 ma, v ce = 2 v h fe 25 - - collector-emitter saturation voltage1) i c = 500 ma, i b = 50 ma v cesat - - 0.5 v base-emitter voltage 1) i c = 500 ma, v ce = 2 v v be(on) - - 1 ac characteristics - mhz f t - transition frequency i c = 50 ma, v ce = 10 v, f = 20 mhz 125 1) pulse test: t 300 s, d = 2%
bcx51...bcx53 feb-10-2004 4 collector current i c = f ( v be ) v ce = 2v 10 0 0.6 bcx 51...53 ehp00437 v be 10 ma 10 10 10 4 3 2 1 0 5 5 5 v 0.2 0.4 0.8 1.0 1.2 100 25 -50 c ?c ?c ?c total power dissipation p tot = f ( t s ) 0 20 40 60 80 100 120 c 150 t s 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 w 1.2 p tot transition frequency f t = f ( i c ) v ce = 10v 10 10 10 10 bcx 51...53 ehp00439 f ma mhz 01 23 5 t 3 10 10 2 1 10 5 5 5 c permissible pulse load p totmax / p totdc = f ( t p ) 10 ehp00438 bcx 51...53 -6 0 10 5 d = 5 10 1 5 10 2 3 10 10 -5 10 -4 10 -3 10 -2 10 0 s 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p = d t t p t tot max tot p dc p p t
bcx51...bcx53 feb-10-2004 5 collector-emitter saturation voltage i c = f ( v cesat ), h fe = 10 0 0.4 0.8 bcx 51...53 ehp00441 v ce sat v ma 10 4 1 10 10 10 2 10 10 3 10 c 5 5 5 10 0 0.2 0.6 100 25 -50 ?c ?c ?c dc current gain h fe = f ( i c ) v ce = 2v 10 10 10 10 bcx 51...53 ehp00440 h ma 0 1 34 fe 3 10 10 2 0 10 5 5 10 1 2 10 5 100 25 -50 555 c ?c ?c ?c collector cutoff current i cbo = f ( t a ) v cb = 30v 10 0 50 100 150 bcx 51...53 ehp00442 t a 5 10 10 na 10 cb0 5 5 5 10 10 4 3 2 1 0 -1 max typ ?c base-emitter saturation voltage i c = f (v besat ), h fe = 10 10 0 0.6 bcx 51...53 ehp00443 v be sat 10 ma 10 10 10 4 3 2 1 0 5 5 5 v 0.2 0.4 0.8 1.0 1.2 100 25 -50 c ?c ?c ?c
|
